Improvement of physical properties of MOS devices based on rare earth oxides

We have successfully deposited a thin film of rare earth oxide on Si substrate. After morphological characterization via scanning electron microscope and an atomic force microscope, the electrical properties Al/Dy 2 O 3 /Si MOS structure were investigated using current–voltage I(V) capacitance–voltage C(V) measurements, as well study in dynamic regime (AC) conductance–frequency σ( f) measurements at different temperatures. Based classical Schottky model, we able to determine some physical parameters, namely, ideality factor potential barrier height. The effect resistance interface states characteristics is observable results deviation from factor. Then, dielectric data been acquired by means impedance spectroscopy over wide frequency temperature range. These show that understanding dependence this may be great help improving quality Dy developed substrate for future device technology.